SUD50N03-12P-E3【PDF 2/7 页】MOSFET N-CH D-S 30V TO252

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SUD50N03-12P

Vishay Siliconix

SPECIFICATIONS (T J = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min .

Typ. a

Max.

Unit

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

V DS

V GS(th)

V GS = 0 V, I D = 250 μA

V DS = V GS , I D = 250 μA

30

1

3

V

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current b

Drain-Source On-State Resistance b

Forward Transconductance b

I GSS

I DSS

I D(on)

R DS(on)

g fs

V DS = 0 V, V GS = ± 20 V

V DS = 24 V, V GS = 0 V

V DS = 24 V, V GS = 0 V, T J = 125 °C

V DS = ? 5 V, V GS = 10 V

V GS = 10 V, I D = 20 A

V GS = 10 V, I D = 20 A, T J = 125 °C

V GS = 4.5 V, I D = 15 A

V DS = 15 V, I D = 20 A

40

15

0.0100

0.0138

± 100

1

50

0.0120

0.0170

0.0175

nA

μA

A

?

S

Dynamic a

Input Capacitance

C iss

1600

Gate-Source Charge

Gate-Drain Charge

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge c

c

c

C oss

C rss

Q g

Q gs

Q gd

V GS = 0 V, V DS = 25 V, f = 1 MHz

V DS = 15 V, V GS = 10 V, I D = 50 A

285

140

28

6

5

42

pF

nC

Gate Resistance R g

f = 1 MHz

0.3

1.5

3.0

?

Turn-On Delay Time

c

Rise Time c

Turn-Off Delay Time c

Fall Time c

t d(on)

t r

t d(off)

t f

V DD = 15 V, R L = 0.3 ?

I D ? 50 A, V GEN = 10 V, R G = 2.5 ?

9

15

20

12

15

25

30

20

ns

Source-Drain Diode Ratings and Characteristics (T C = 25 °C)

Pulsed Current I SM

100

A

Diode Forward Voltage b

V SD

I F = 40 A, V GS = 0 V

1.2

1.5

V

Source-Drain Reverse Recovery Time t rr

I F = 50 A, dI/dt = 100 A/μs

25

70

ns

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C unless noted)

80

60

V GS = 10 thru 5 V

80

60

40

20

4V

3V

40

20

T C = 125 °C

25 °C

- 55 °C

0

0

1 2 3 4

5

0

0

1

2

3

4

5

6

www.vishay.com

2

V DS - Drain-to-Source Voltage (V)

Output Characteristics

V GS - Gate-to-Source Voltage (V)

Transfer Characteristics

Document Number: 72267

S12-0335-Rev. C, 13-Feb-12

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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